Polariton lasing in a ZnO-based microcavity up to 353K

Ying Yu Lai; Yu-Pin Lan; Si Wei Huang; Tien-chang Lu; Shing Chung Wang

doi:10.1109/ISLC.2012.6348375

Polariton lasing in a ZnO-based microcavity up to 353K

Ying Yu Lai^*, Yu-Pin Lan, Si Wei Huang, Tien-chang Lu, Shing Chung Wang

^*此作品的通信作者

研究成果: Conference article › 同行評審

摘要

We report the polariton lasing at temperature up to 353K in a ZnO-based microcavity. The large exciton binding energy and Rabi-splitting of ZnO ensuring the strong coupling regime is maintained at high temperature.

原文	English
文章編號	6348375
頁（從 - 到）	143-144
頁數	2
期刊	Conference Digest - IEEE International Semiconductor Laser Conference
DOIs	https://doi.org/10.1109/ISLC.2012.6348375
出版狀態	Published - 10 10月 2012
事件	23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, 美國持續時間: 7 10月 2012 → 10 10月 2012

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10.1109/ISLC.2012.6348375

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title = "Polariton lasing in a ZnO-based microcavity up to 353K",

abstract = "We report the polariton lasing at temperature up to 353K in a ZnO-based microcavity. The large exciton binding energy and Rabi-splitting of ZnO ensuring the strong coupling regime is maintained at high temperature.",

author = "Lai, {Ying Yu} and Yu-Pin Lan and Huang, {Si Wei} and Tien-chang Lu and Wang, {Shing Chung}",

year = "2012",

month = oct,

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doi = "10.1109/ISLC.2012.6348375",

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note = "23rd IEEE International Semiconductor Laser Conference, ISLC 2012 ; Conference date: 07-10-2012 Through 10-10-2012",

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AU - Lai, Ying Yu

AU - Lan, Yu-Pin

AU - Huang, Si Wei

AU - Lu, Tien-chang

AU - Wang, Shing Chung

PY - 2012/10/10

Y1 - 2012/10/10

N2 - We report the polariton lasing at temperature up to 353K in a ZnO-based microcavity. The large exciton binding energy and Rabi-splitting of ZnO ensuring the strong coupling regime is maintained at high temperature.

AB - We report the polariton lasing at temperature up to 353K in a ZnO-based microcavity. The large exciton binding energy and Rabi-splitting of ZnO ensuring the strong coupling regime is maintained at high temperature.

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DO - 10.1109/ISLC.2012.6348375

M3 - Conference article

AN - SCOPUS:84870597303

SN - 0899-9406

SP - 143

EP - 144

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

M1 - 6348375

T2 - 23rd IEEE International Semiconductor Laser Conference, ISLC 2012

Y2 - 7 October 2012 through 10 October 2012

ER -

Polariton lasing in a ZnO-based microcavity up to 353K

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