PLhenomenological model of grain-boundary trapping states in polycrystalline silicon under optical illumination

E. Poon*, Wei Hwang

*此作品的通信作者

研究成果: Article同行評審

39 引文 斯高帕斯(Scopus)

摘要

We have developed a new phenomenological model of grain boundary (GB) recombination, carrier transport and electrostatics under assumptions of Gaussian energy distributions of GB interface states, and unequal capture cross-sections of these GB states for electrons and holes in polycrystalline materials. Calculations have been performed of the recombination current density and the recombination velocity at grain boundaries in polycrystalline silicon for four different energy distributions. The results indicated that the recombination velocity at the grain boundary strongly depends on the location of the trap energy level. The assumption of GB interface states with a discrete (δ-function) distribution has been found to be inappropriate.

原文English
頁(從 - 到)699-705
頁數7
期刊Solid State Electronics
25
發行號8
DOIs
出版狀態Published - 1 1月 1982

指紋

深入研究「PLhenomenological model of grain-boundary trapping states in polycrystalline silicon under optical illumination」主題。共同形成了獨特的指紋。

引用此