Plasma charging induced gate oxide damage during metal etching and ashing

Horng-Chih Lin; C. H. Perng; Chao-Hsin Chien; S. G. Chiou; T. F. Chang; T. Y. Huang; C. Y. Chang

doi:10.1109/PPID.1996.715215

Plasma charging induced gate oxide damage during metal etching and ashing

Horng-Chih Lin^*, C. H. Perng, Chao-Hsin Chien, S. G. Chiou, T. F. Chang, T. Y. Huang, C. Y. Chang

^*此作品的通信作者

電子研究所

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Gate oxide damage induced by plasma charging during metal etching with MERIE or helicon wave etcher and subsequent resist ashing was investigated. It was found that serious damage would occur during the MERIE processing, while good results were obtained with helicon wave etcher. It was also observed that the antenna effect can be clearly illustrated by measuring the gate current.

原文	English
頁面	113-116
頁數	4
DOIs	https://doi.org/10.1109/PPID.1996.715215
出版狀態	Published - 1996
事件	Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA 持續時間: 13 5月 1996 → 14 5月 1996

Conference

Conference	Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
城市	Santa Clara, CA, USA
期間	13/05/96 → 14/05/96

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10.1109/PPID.1996.715215

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@conference{a4e2652a3ec54c539e99a8166f536615,

title = "Plasma charging induced gate oxide damage during metal etching and ashing",

abstract = "Gate oxide damage induced by plasma charging during metal etching with MERIE or helicon wave etcher and subsequent resist ashing was investigated. It was found that serious damage would occur during the MERIE processing, while good results were obtained with helicon wave etcher. It was also observed that the antenna effect can be clearly illustrated by measuring the gate current.",

author = "Horng-Chih Lin and Perng, {C. H.} and Chao-Hsin Chien and Chiou, {S. G.} and Chang, {T. F.} and Huang, {T. Y.} and Chang, {C. Y.}",

year = "1996",

doi = "10.1109/PPID.1996.715215",

language = "English",

pages = "113--116",

note = "Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID ; Conference date: 13-05-1996 Through 14-05-1996",

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T1 - Plasma charging induced gate oxide damage during metal etching and ashing

AU - Lin, Horng-Chih

AU - Perng, C. H.

AU - Chien, Chao-Hsin

AU - Chiou, S. G.

AU - Chang, T. F.

AU - Huang, T. Y.

AU - Chang, C. Y.

PY - 1996

Y1 - 1996

N2 - Gate oxide damage induced by plasma charging during metal etching with MERIE or helicon wave etcher and subsequent resist ashing was investigated. It was found that serious damage would occur during the MERIE processing, while good results were obtained with helicon wave etcher. It was also observed that the antenna effect can be clearly illustrated by measuring the gate current.

AB - Gate oxide damage induced by plasma charging during metal etching with MERIE or helicon wave etcher and subsequent resist ashing was investigated. It was found that serious damage would occur during the MERIE processing, while good results were obtained with helicon wave etcher. It was also observed that the antenna effect can be clearly illustrated by measuring the gate current.

UR - http://www.scopus.com/inward/record.url?scp=0029719005&partnerID=8YFLogxK

U2 - 10.1109/PPID.1996.715215

DO - 10.1109/PPID.1996.715215

M3 - Paper

AN - SCOPUS:0029719005

SP - 113

EP - 116

T2 - Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID

Y2 - 13 May 1996 through 14 May 1996

ER -

Plasma charging induced gate oxide damage during metal etching and ashing

摘要

Conference

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