Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications

Shih Ching Chen*, Ting Chang Chang, Po-Tsun Liu, Yung Chun Wu, Chin Cheng Ko, Sidney Yang, Li Wei Feng, S. M. Sze, Chun Yen Chang, Chen Hsin Lien

*此作品的通信作者

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

In this work, we studied a pi-shape gate polycrystalline silicon thin-film transistor (poly-Si TFT) with silicon-oxide-nitride-oxide-silicon (SONOS) layers and nanowire channels for the application of electric driver and nonvolatile memory. The proposed pi-gate TFT-SONOS has superior transfer characteristics and its output characteristic also exhibits the high driving current and the suppression of the kink effect. For memory application, the device can provide high program/erase efficiency and large threshold voltage shift under adequate bias operation. The enhanced performance for the pi-gate TFT-SONOS is attributed to the larger effective channel width and the number of channel corners.

原文English
文章編號213101
頁數3
期刊Applied Physics Letters
91
發行號21
DOIs
出版狀態Published - 2007

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