Stress induced leakage currents (SILC) in very thin silicon nitride gate dielectrics were studied. A model was proposed to explain the physical origin of SILC and noisy breakdown. A large number of weak conduction paths were found to contribute to SILC in silicon nitride. Soft or noisy breakdown occurred when a strong tunnel path was created by electrical stress.
|出版狀態||Published - 1 一月 2001|
|事件||Device Research Conference (DRC) - Notre Dame, IN, United States|
持續時間: 25 六月 2001 → 27 六月 2001
|Conference||Device Research Conference (DRC)|
|城市||Notre Dame, IN|
|期間||25/06/01 → 27/06/01|