Physical origin of SILC and noisy breakdown in very thin silicon nitride gate dielectric

I. Polishchuk, T. J. King, Chen-Ming Hu

研究成果: Paper同行評審

4 引文 斯高帕斯(Scopus)

摘要

Stress induced leakage currents (SILC) in very thin silicon nitride gate dielectrics were studied. A model was proposed to explain the physical origin of SILC and noisy breakdown. A large number of weak conduction paths were found to contribute to SILC in silicon nitride. Soft or noisy breakdown occurred when a strong tunnel path was created by electrical stress.

原文English
頁面20-21
頁數2
出版狀態Published - 1 一月 2001
事件Device Research Conference (DRC) - Notre Dame, IN, United States
持續時間: 25 六月 200127 六月 2001

Conference

ConferenceDevice Research Conference (DRC)
國家/地區United States
城市Notre Dame, IN
期間25/06/0127/06/01

指紋

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