Physical mechanism of high-programming-efficiency dynamic-threshold source-side injection in wrapped-select-gate SONOS for nor-type flash memory

Kuan Ti Wang*, Tien-Sheng Chao, Tsung Yu Chiang, Woei Cherng Wu, Po Yi Kuo, Yi Hon Wu, Yu Lun Lu, Chia Chun Liao, Wen Luh Yang, Chien Hsing Lee, Tsung Min Hsieh, Jhyy Cheng Liou, Shen De Wang, Tzu Pin Chen, Chien Hung Chen, Chih Hung Lin, Hwi Huang Chen

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

For the first time, a programming mechanism for conventional source-side injection (SSI) (normal mode), substrate-bias enhanced SSI (body mode), and dynamic-threshold SSI (DTSSI) (DT mode) of a wrapped-select-gate SONOS memory is developed with 2-D Poisson equation and hot-electron simulation and programming characteristic measurement for nor Flash memory. Compared with traditional SSI, DTSSI mechanisms are determined in terms of lateral acceleration electric field and programming current (I PGM ) in the neutral gap region, resulting in high programming efficiency. Furthermore, the lateral electric field intersects the vertical electric field, indicating that the main charge injection point is from the end edge of the gap region close to the word gate.

原文English
頁(從 - 到)1206-1208
頁數3
期刊IEEE Electron Device Letters
30
發行號11
DOIs
出版狀態Published - 6 11月 2009

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