Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

Chin Ching Lin; San-Yuan Chen; Syh Yuh Cheng

doi:10.1016/j.apsusc.2004.05.255

Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

Chin Ching Lin^*, San-Yuan Chen, Syh Yuh Cheng

^*此作品的通信作者

材料科學與工程學系

研究成果: Conference article › 同行評審

30 引文斯高帕斯（Scopus）

摘要

ZnO films were implanted with phosphorus in the range from 5×10 ¹² to 5×10 ¹⁵ cm ^-2 . Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5×10 ¹⁸ ions/cm ³ ), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5×10 ¹⁸ ions/cm ³ ), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping.

原文	English
頁（從 - 到）	405-409
頁數	5
期刊	Applied Surface Science
卷	238
發行號	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.apsusc.2004.05.255
出版狀態	Published - 15 11月 2004
事件	APHYS 2003 - Badajoz, Spain 持續時間: 13 10月 2003 → 18 10月 2003

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@article{bed95e638f8440d1a04825bb9f24b903,

title = "Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films",

abstract = " ZnO films were implanted with phosphorus in the range from 5×10 12 to 5×10 15 cm -2 . Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5×10 18 ions/cm 3 ), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5×10 18 ions/cm 3 ), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping.",

keywords = "Defect chemistry, Phosphorus implantation, Photoluminescence, ZnO",

author = "Lin, {Chin Ching} and San-Yuan Chen and Cheng, {Syh Yuh}",

year = "2004",

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day = "15",

doi = "10.1016/j.apsusc.2004.05.255",

language = "English",

volume = "238",

pages = "405--409",

journal = "Applied Surface Science",

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number = "1-4 SPEC. ISS.",

note = "APHYS 2003 ; Conference date: 13-10-2003 Through 18-10-2003",

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TY - JOUR

T1 - Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

AU - Lin, Chin Ching

AU - Chen, San-Yuan

AU - Cheng, Syh Yuh

PY - 2004/11/15

Y1 - 2004/11/15

N2 - ZnO films were implanted with phosphorus in the range from 5×10 12 to 5×10 15 cm -2 . Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5×10 18 ions/cm 3 ), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5×10 18 ions/cm 3 ), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping.

AB - ZnO films were implanted with phosphorus in the range from 5×10 12 to 5×10 15 cm -2 . Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5×10 18 ions/cm 3 ), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5×10 18 ions/cm 3 ), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping.

KW - Defect chemistry

KW - Phosphorus implantation

KW - Photoluminescence

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=4644316774&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2004.05.255

DO - 10.1016/j.apsusc.2004.05.255

M3 - Conference article

AN - SCOPUS:4644316774

SN - 0169-4332

VL - 238

SP - 405

EP - 409

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4 SPEC. ISS.

T2 - APHYS 2003

Y2 - 13 October 2003 through 18 October 2003

ER -

Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

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