The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔVth of MZO-passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large ΔV th of -10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive Vth shift of 1.69 V after 5400 sec of positive bias stress (PBS), while the ΔVth of MZO-passivated TFTs was only 0.45 V.
|頁（從 - 到）||178-181|
|期刊||Digest of Technical Papers - SID International Symposium|
|出版狀態||Published - 1 1月 2013|