Photostability improvement of a-InGaZnO TFTs by introducing a transparent UV shielding layer

Min Yen Tsai; Yun Chu Tsai; Li Feng Teng; Po-Tsun Liu; Han Ping D. Shieh

doi:10.1002/j.2168-0159.2013.tb06172.x

Photostability improvement of a-InGaZnO TFTs by introducing a transparent UV shielding layer

Min Yen Tsai, Yun Chu Tsai, Li Feng Teng, Po-Tsun Liu, Han Ping D. Shieh

光電工程學系

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4 引文斯高帕斯（Scopus）

摘要

The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔV_th of MZO-passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large ΔV _th of -10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive V_th shift of 1.69 V after 5400 sec of positive bias stress (PBS), while the ΔV_th of MZO-passivated TFTs was only 0.45 V.

原文	English
頁（從 - 到）	178-181
頁數	4
期刊	Digest of Technical Papers - SID International Symposium
卷	44
發行號	1
DOIs	https://doi.org/10.1002/j.2168-0159.2013.tb06172.x
出版狀態	Published - 1 1月 2013

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10.1002/j.2168-0159.2013.tb06172.x

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title = "Photostability improvement of a-InGaZnO TFTs by introducing a transparent UV shielding layer",

abstract = "The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔVth of MZO-passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large ΔV th of -10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive Vth shift of 1.69 V after 5400 sec of positive bias stress (PBS), while the ΔVth of MZO-passivated TFTs was only 0.45 V.",

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AU - Tsai, Min Yen

AU - Tsai, Yun Chu

AU - Teng, Li Feng

AU - Liu, Po-Tsun

AU - Shieh, Han Ping D.

PY - 2013/1/1

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N2 - The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔVth of MZO-passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large ΔV th of -10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive Vth shift of 1.69 V after 5400 sec of positive bias stress (PBS), while the ΔVth of MZO-passivated TFTs was only 0.45 V.

AB - The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔVth of MZO-passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large ΔV th of -10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive Vth shift of 1.69 V after 5400 sec of positive bias stress (PBS), while the ΔVth of MZO-passivated TFTs was only 0.45 V.

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KW - negative bias illumination stress (NBIS)

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KW - photosensitivity

KW - transparent UV shielding layer

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Photostability improvement of a-InGaZnO TFTs by introducing a transparent UV shielding layer

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