Photonic crystal surface emitting lasers with quantum dot active region

Tzu Shan Chen; Zong Lin Li; Ming Yang Hsu; Kuo-Jui Lin; Sheng-Di Lin

doi:10.1109/JLT.2017.2744978

Photonic crystal surface emitting lasers with quantum dot active region

Tzu Shan Chen, Zong Lin Li, Ming Yang Hsu, Kuo-Jui Lin^*, Sheng-Di Lin

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摘要

GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.

原文	English
文章編號	8016584
頁（從 - 到）	4547-4552
頁數	6
期刊	Journal of Lightwave Technology
卷	35
發行號	20
DOIs	https://doi.org/10.1109/JLT.2017.2744978
出版狀態	Published - 15 10月 2017

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10.1109/JLT.2017.2744978

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title = "Photonic crystal surface emitting lasers with quantum dot active region",

abstract = "GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.",

keywords = "Optical pumping, Photonic crystals, Quantum dots, Semiconductor lasers, Surface emitting lasers",

author = "Chen, {Tzu Shan} and Li, {Zong Lin} and Hsu, {Ming Yang} and Kuo-Jui Lin and Sheng-Di Lin",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = oct,

day = "15",

doi = "10.1109/JLT.2017.2744978",

language = "English",

volume = "35",

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T1 - Photonic crystal surface emitting lasers with quantum dot active region

AU - Chen, Tzu Shan

AU - Li, Zong Lin

AU - Hsu, Ming Yang

AU - Lin, Kuo-Jui

AU - Lin, Sheng-Di

PY - 2017/10/15

Y1 - 2017/10/15

N2 - GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.

AB - GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.

KW - Optical pumping

KW - Photonic crystals

KW - Quantum dots

KW - Semiconductor lasers

KW - Surface emitting lasers

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DO - 10.1109/JLT.2017.2744978

M3 - Article

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SN - 0733-8724

VL - 35

SP - 4547

EP - 4552

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

IS - 20

M1 - 8016584

ER -

Photonic crystal surface emitting lasers with quantum dot active region

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