Photonic crystal surface emitting lasers with quantum dot active region

Tzu Shan Chen, Zong Lin Li, Ming Yang Hsu, Kuo-Jui Lin*, Sheng-Di Lin

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.

原文English
文章編號8016584
頁(從 - 到)4547-4552
頁數6
期刊Journal of Lightwave Technology
35
發行號20
DOIs
出版狀態Published - 15 10月 2017

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