Photonic-crystal (PC) surface-emitting lasers in red wavelength range are demonstrated without epitaxial regrowth in this work. Two-dimensional PCs were patterned and circular shaped holes were etched from GaAs contact down to AlInP cladding layers to form the “PC slab-on-substrate” structure. Indium-tin-oxide was then deposited to facilitate both electrical injection and optical transmission. The fabricated devices were characterized by pulsed current source. The lasing wavelength was around 664 nm at designed lattice period of 208 nm. The peak intensity was over 6 mW at peak current of 2.5 A. The far-field pattern exhibited dual lobes separated by 3.5 degree and the beam divergence perpendicular to the lobes was about 1 degree.