Photon Generation in Forward-Biased Silicon p-n Junctions

T. C. Ong; K. W. Terrill; S. Tam; Chen-Ming Hu

doi:10.1109/EDL.1983.25802

Photon Generation in Forward-Biased Silicon p-n Junctions

T. C. Ong, K. W. Terrill, S. Tam, Chen-Ming Hu

國際半導體產業學院

研究成果: Article › 同行評審

20 引文斯高帕斯（Scopus）

摘要

Photons are generated by forward biasing a silicon p-n junction at 10-5 ~ 10-4 quantum efficiency through radiative recombination. At large distances from the forward-biased junction, leakage currents of magnitudes significant for some VLSI circuits can appear due to the substrate minority carriers generated by the photons. The effective decay length of the measured leakage current is about several hundred to one thousand micrometers. The effects of forward biasing an input node or a parasitic lateral bipolar transistor are, therefore, longer ranged than commonly assumed.

原文	English
頁（從 - 到）	460-462
頁數	3
期刊	IEEE Electron Device Letters
卷	4
發行號	12
DOIs	https://doi.org/10.1109/EDL.1983.25802
出版狀態	Published - 1 1月 1983

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AB - Photons are generated by forward biasing a silicon p-n junction at 10-5 ~ 10-4 quantum efficiency through radiative recombination. At large distances from the forward-biased junction, leakage currents of magnitudes significant for some VLSI circuits can appear due to the substrate minority carriers generated by the photons. The effective decay length of the measured leakage current is about several hundred to one thousand micrometers. The effects of forward biasing an input node or a parasitic lateral bipolar transistor are, therefore, longer ranged than commonly assumed.

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Photon Generation in Forward-Biased Silicon p-n Junctions

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