Photoluminescence study of interdot carrier transfer on strain-relaxed InAs quantum dots

Chen Hao Chiang*, You Cheng Chang, Yue Han Wu, Meng Chien Hsieh, Cheng Hong Yang, Jia Feng Wang, Li Chang, Jenn-Fang Chen

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Photoluminescence (PL) properties of the strain relaxed InAs quantum dots (QDs) are studied as a function of temperature from 10 to 300 K. Two groups of QDs induced by strain relaxation are observed in the PL spectra. The PL peak position of the relaxed (non-relaxed) QDs locates at a higher (lower) energy. TEM image prove QDs are distributed into two groups and indicate the QDs relax the strain by diffusing indium to GaAs. In the 120-200 K temperature range, there are abnormal temperature behaviors attributed to the carrier transfer from the relaxed to non-relaxed QDs.

原文English
主出版物標題Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
頁面515-516
頁數2
DOIs
出版狀態Published - 7月 2010
事件30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
持續時間: 25 7月 201030 7月 2010

出版系列

名字AIP Conference Proceedings
1399
ISSN(列印)0094-243X
ISSN(電子)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
國家/地區Korea, Republic of
城市Seoul
期間25/07/1030/07/10

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