Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

G. W. Shu, J. S. Wang, J. L. Shen*, R. S. Hsiao, J. F. Chen, T. Y. Lin, C. H. Wu, Y. H. Huang, T. N. Yang

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement.

原文English
頁(從 - 到)46-49
頁數4
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
166
發行號1
DOIs
出版狀態Published - 15 一月 2010

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