Photoluminescence studies of GaN films of different buffer layer and doping concentration

C. C. Shen; C. K. Shu; H. C. Lin; J. Ou; Wei-Kuo Chen; M. C. Lee; W. H. Chen

Photoluminescence studies of GaN films of different buffer layer and doping concentration

C. C. Shen^*, C. K. Shu, H. C. Lin, J. Ou, Wei-Kuo Chen, M. C. Lee, W. H. Chen

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of ∼ -4 x 10^-4 eV-K^-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n^1/3. We also obtained a concentration coefficient of 2.34 x 10^-4 eV·cm and a band gap energy of 3.426 eV in the undoped GaN film.

原文	English
頁（從 - 到）	32-37
頁數	6
期刊	Chinese Journal of Physics
卷	36
發行號	1
出版狀態	Published - 1 12月 1998

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@article{292c849af98448b98bee0fd4b34a31be,

title = "Photoluminescence studies of GaN films of different buffer layer and doping concentration",

abstract = "Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of ∼ -4 x 10-4 eV-K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n1/3. We also obtained a concentration coefficient of 2.34 x 10-4 eV·cm and a band gap energy of 3.426 eV in the undoped GaN film.",

author = "Shen, {C. C.} and Shu, {C. K.} and Lin, {H. C.} and J. Ou and Wei-Kuo Chen and Lee, {M. C.} and Chen, {W. H.}",

year = "1998",

month = dec,

day = "1",

language = "English",

volume = "36",

pages = "32--37",

journal = "Chinese Journal of Physics",

issn = "0577-9073",

publisher = "Physical Society of the Republic of China",

number = "1",

}

TY - JOUR

T1 - Photoluminescence studies of GaN films of different buffer layer and doping concentration

AU - Shen, C. C.

AU - Shu, C. K.

AU - Lin, H. C.

AU - Ou, J.

AU - Chen, Wei-Kuo

AU - Lee, M. C.

AU - Chen, W. H.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of ∼ -4 x 10-4 eV-K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n1/3. We also obtained a concentration coefficient of 2.34 x 10-4 eV·cm and a band gap energy of 3.426 eV in the undoped GaN film.

AB - Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of ∼ -4 x 10-4 eV-K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n1/3. We also obtained a concentration coefficient of 2.34 x 10-4 eV·cm and a band gap energy of 3.426 eV in the undoped GaN film.

UR - http://www.scopus.com/inward/record.url?scp=18844374394&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:18844374394

SN - 0577-9073

VL - 36

SP - 32

EP - 37

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

IS - 1

ER -

Photoluminescence studies of GaN films of different buffer layer and doping concentration

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