Photoluminescence enhancement and structure repairing of monolayer MoSe2 by hydrohalic acid treatment

Hau Vei Han, Ang Yu Lu, Li Syuan Lu, Jing Kai Huang, Henan Li, Chang Lung Hsu, Yung Chang Lin, Ming Hui Chiu, Kazu Suenaga, Chih Wei Chu, Hao-Chung Kuo*, Wen-Hao Chang, Lain Jong Li, Yumeng Shi

*此作品的通信作者

研究成果: Article同行評審

123 引文 斯高帕斯(Scopus)

摘要

Atomically thin two-dimensional transitionmetal dichalcogenides (TMDCs) have attracted much attention recently due to their unique electronic and optical properties for future optoelectronic devices. The chemical vapor deposition (CVD) method is able to generate TMDCs layers with a scalable size and a controllable thickness. However, the TMDC monolayers grown by CVD may incorporate structural defects, and it is fundamentally important to understand the relation between photoluminescence and structural defects. In this report, point defects (Se vacancies) and oxidized Se defects in CVD-grown MoSe2 monolayers are identified by transmission electron microscopy and X-ray photoelectron spectroscopy. These defects can significantly trap free charge carriers and localize excitons, leading to the smearing of free band-To-band exciton emission. Here, we report that the simple hydrohalic acid treatment (such as HBr) is able to efficiently suppress the trapstate emission and promote the neutral exciton and trion emission in defective MoSe2 monolayers through the p-doping process, where the overall photoluminescence intensity at room temperature can be enhanced by a factor of 30. We show that HBr treatment is able to activate distinctive trion and free exciton emissions even from highly defective MoSe2 layers. Our results suggest that the HBr treatment not only reduces the n-doping in MoSe2 but also reduces the structural defects. The results provide further insights of the control and tailoring the exciton emission from CVD-grown monolayer TMDCs.

原文English
頁(從 - 到)1454-1461
頁數8
期刊ACS Nano
10
發行號1
DOIs
出版狀態Published - 26 一月 2016

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