TY - JOUR
T1 - Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors under Various Ambient Conditions
AU - Tiwari, Nidhi
AU - Chauhan, Ram Narayan
AU - Shieh, Han Ping D.
AU - Liu, Po-Tsun
AU - Huang, Yi-Pai
PY - 2016/4
Y1 - 2016/4
N2 - Zinc oxide (ZnO) cosputtered indium-gallium-ZnO (IGZO) and pure IGZO thin films have been deposited at room temperature by dual RF magnetron sputtering and annealed in argon (Ar), nitrogen (N2), and oxygen (O2) ambients. The beneficial effect of various annealing environments appears because of a reorganization of the amorphous network with controlling the defect chemistry in the films as systematically investigated by photoluminescence analysis. The various defects, such as zinc vacancy (VZn), zinc interstitial (Zni), and oxygen vacancy (VO), were remarkably enhanced in argon, while suppressed in N2 and O2 ambients-leading more reliable cosputtered structure than the IGZO to be utilized in thin-film transistors (TFTs) fabrication for transparent electronics. Furthermore, the ZnO cosputtered IGZO TFTs were also fabricated and systematically investigated the impact of various annealing environments on their performance characteristics. The characteristics were improved in N2 ambient-displaying the field-effect mobility (μFE) of 16.10 cm2 Vs, the threshold voltage (Vth) of 1.50 V, the subthreshold swing of 0.21 V/decade, and the negative bias illumination stress shifting of-2.75 V.
AB - Zinc oxide (ZnO) cosputtered indium-gallium-ZnO (IGZO) and pure IGZO thin films have been deposited at room temperature by dual RF magnetron sputtering and annealed in argon (Ar), nitrogen (N2), and oxygen (O2) ambients. The beneficial effect of various annealing environments appears because of a reorganization of the amorphous network with controlling the defect chemistry in the films as systematically investigated by photoluminescence analysis. The various defects, such as zinc vacancy (VZn), zinc interstitial (Zni), and oxygen vacancy (VO), were remarkably enhanced in argon, while suppressed in N2 and O2 ambients-leading more reliable cosputtered structure than the IGZO to be utilized in thin-film transistors (TFTs) fabrication for transparent electronics. Furthermore, the ZnO cosputtered IGZO TFTs were also fabricated and systematically investigated the impact of various annealing environments on their performance characteristics. The characteristics were improved in N2 ambient-displaying the field-effect mobility (μFE) of 16.10 cm2 Vs, the threshold voltage (Vth) of 1.50 V, the subthreshold swing of 0.21 V/decade, and the negative bias illumination stress shifting of-2.75 V.
KW - Photoluminescence (PL)
KW - sputtering
KW - thin films
KW - thin-film transistor (TFT).
UR - http://www.scopus.com/inward/record.url?scp=84963499835&partnerID=8YFLogxK
U2 - 10.1109/TED.2016.2525799
DO - 10.1109/TED.2016.2525799
M3 - Article
AN - SCOPUS:84963499835
SN - 0018-9383
VL - 63
SP - 1578
EP - 1581
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
M1 - 7416615
ER -