摘要
We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum Δα ∼ 14400 cm-1, which is 2.6 times larger than the maximum Δα ∼ 5400 cm -1 of the SQW sample.
原文 | English |
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頁(從 - 到) | 278-280 |
頁數 | 3 |
期刊 | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
DOIs | |
出版狀態 | Published - 31 5月 2004 |
事件 | 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, 日本 持續時間: 31 5月 2004 → 4 6月 2004 |