Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy

T. S. Lay*, P. P. Shen, E. Y. Lin, K. M. Kong, L. P. Chen, J. S. Wang, Kuo-Jui Lin, J. Y. Chi

*此作品的通信作者

研究成果: Conference article同行評審

摘要

We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum Δα ∼ 14400 cm-1, which is 2.6 times larger than the maximum Δα ∼ 5400 cm -1 of the SQW sample.

原文English
頁(從 - 到)278-280
頁數3
期刊Conference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs
出版狀態Published - 31 5月 2004
事件2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
持續時間: 31 5月 20044 6月 2004

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