Photoconductance transient response in polycrystalline silicon

E. Poon*, Wei Hwang, E. S. Yang, H. L. Evans

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The photoconductance transient response in polycrystalline silicon has been studied theoretically and experimentally. Shockley-Read-Hall statistics are used to describe the emission and capture processes at the grain-boundary traps. Under appropriate conditions, the minority carrier capture and emission time constants of the grain-boundary trap can be directly obtained from the photoconductance transient response. The photoconductance method is therefore useful for studying grain-boundary deep level states. The special case when a focused laser spot is employed is also discussed. From the experimental data obtained from large-grain Wacker polycrystalline silicon, we have discovered a donor-like level at 0.48 eV below the conduction band with a concentration of 2×1010 cm-2. The electron (minority carrier) lifetime is found to be about 6×10- 10-10-9 s.

原文English
頁(從 - 到)338-344
頁數7
期刊Journal of Applied Physics
57
發行號2
DOIs
出版狀態Published - 1 12月 1985

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