@inproceedings{fa4fba02169143d59c23a761ee0854b4,
title = "Photo-response elimination of amorphous InGaZnO thin film transistors by introducing a Mo-doped-ZnO passivation layer",
abstract = "A Mo-doped ZnO (MZO) with a bandgap ~3.3eV is adopted to eliminate the wavelength-dependent photo-responses in a-IGZO TFTs. The MZO passivated a-IGZO TFTs presents AV(h less than 1V under NBIS while the wavelength varied from 360 nm to 620 nm, whereas the unpassivated a-IGZO TFTs exhibits AVth around -10V.",
keywords = "A-IGZO, Nbis, Passivation, Thin film transistors",
author = "Tsai, {Yun Chu} and Tsai, {Min Yen} and Teng, {Li Feng} and Po-Tsun Liu and Shieh, {Han Ping D.}",
year = "2013",
month = jan,
day = "1",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "294--296",
booktitle = "20th International Display Workshops 2013, IDW 2013",
note = "null ; Conference date: 03-12-2013 Through 06-12-2013",
}
