Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

M. C. Wang; T. C. Chang; Po-Tsun Liu; S. W. Tsao; J. R. Chen

doi:10.1063/1.2738192

Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

M. C. Wang
, T. C. Chang^*
, Po-Tsun Liu
, S. W. Tsao
, J. R. Chen

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

The photo-leakage-current (IPLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (Ea) of a-Si:H (:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H (:F). Experimental results show that the IPLC of a-Si:H (:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H (:F) material. However, the higher IPLC is observed in the hole conduction region, resulted from the larger Ea in the a-Si:H (:F) TFTs.

原文	English
文章編號	192114
頁數	3
期刊	Applied Physics Letters
卷	90
發行號	19
DOIs	https://doi.org/10.1063/1.2738192
出版狀態	Published - 2007

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title = "Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor",

abstract = "The photo-leakage-current (IPLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (Ea) of a-Si:H (:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H (:F). Experimental results show that the IPLC of a-Si:H (:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H (:F) material. However, the higher IPLC is observed in the hole conduction region, resulted from the larger Ea in the a-Si:H (:F) TFTs.",

author = "Wang, \{M. C.\} and Chang, \{T. C.\} and Po-Tsun Liu and Tsao, \{S. W.\} and Chen, \{J. R.\}",

year = "2007",

doi = "10.1063/1.2738192",

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volume = "90",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

AU - Wang, M. C.

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Tsao, S. W.

AU - Chen, J. R.

PY - 2007

Y1 - 2007

N2 - The photo-leakage-current (IPLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (Ea) of a-Si:H (:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H (:F). Experimental results show that the IPLC of a-Si:H (:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H (:F) material. However, the higher IPLC is observed in the hole conduction region, resulted from the larger Ea in the a-Si:H (:F) TFTs.

AB - The photo-leakage-current (IPLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (Ea) of a-Si:H (:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H (:F). Experimental results show that the IPLC of a-Si:H (:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H (:F) material. However, the higher IPLC is observed in the hole conduction region, resulted from the larger Ea in the a-Si:H (:F) TFTs.

UR - https://www.scopus.com/pages/publications/34248380490

U2 - 10.1063/1.2738192

DO - 10.1063/1.2738192

M3 - Article

AN - SCOPUS:34248380490

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192114

ER -

Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

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