Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

M. C. Wang; T. C. Chang; Po-Tsun Liu; S. W. Tsao; J. R. Chen

doi:10.1063/1.2738192

Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

M. C. Wang, T. C. Chang^*, Po-Tsun Liu, S. W. Tsao, J. R. Chen

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

The photo-leakage-current (IPLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (Ea) of a-Si:H (:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H (:F). Experimental results show that the IPLC of a-Si:H (:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H (:F) material. However, the higher IPLC is observed in the hole conduction region, resulted from the larger Ea in the a-Si:H (:F) TFTs.

原文	English
文章編號	192114
頁數	3
期刊	Applied Physics Letters
卷	90
發行號	19
DOIs	https://doi.org/10.1063/1.2738192
出版狀態	Published - 2007

存取文件

10.1063/1.2738192

其它文件與鏈接

Link to publication in Scopus

引用此

@article{49a543ead4954dc7a4f8fec63f3eba61,

title = "Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor",

abstract = "The photo-leakage-current (IPLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (Ea) of a-Si:H (:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H (:F). Experimental results show that the IPLC of a-Si:H (:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H (:F) material. However, the higher IPLC is observed in the hole conduction region, resulted from the larger Ea in the a-Si:H (:F) TFTs.",

author = "Wang, {M. C.} and Chang, {T. C.} and Po-Tsun Liu and Tsao, {S. W.} and Chen, {J. R.}",

year = "2007",

doi = "10.1063/1.2738192",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

AU - Wang, M. C.

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Tsao, S. W.

AU - Chen, J. R.

PY - 2007

Y1 - 2007

N2 - The photo-leakage-current (IPLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (Ea) of a-Si:H (:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H (:F). Experimental results show that the IPLC of a-Si:H (:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H (:F) material. However, the higher IPLC is observed in the hole conduction region, resulted from the larger Ea in the a-Si:H (:F) TFTs.

AB - The photo-leakage-current (IPLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (Ea) of a-Si:H (:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H (:F). Experimental results show that the IPLC of a-Si:H (:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H (:F) material. However, the higher IPLC is observed in the hole conduction region, resulted from the larger Ea in the a-Si:H (:F) TFTs.

UR - http://www.scopus.com/inward/record.url?scp=34248380490&partnerID=8YFLogxK

U2 - 10.1063/1.2738192

DO - 10.1063/1.2738192

M3 - Article

AN - SCOPUS:34248380490

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192114

ER -

Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

摘要

存取文件

其它文件與鏈接

指紋

引用此