Phosphorus vacancy as a deep level in AlInP layers

Wei Jer Sung*, Yu Rue Wu, Shih Chang Lee, Tzu Chi Wen, Tsang Jou Li, Jung Ting Chang, Wei-I Lee


研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)


Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.

頁(從 - 到)L567-L568
期刊Japanese Journal of Applied Physics, Part 2: Letters
發行號6 B
出版狀態Published - 15 6月 2000


深入研究「Phosphorus vacancy as a deep level in AlInP layers」主題。共同形成了獨特的指紋。