Phosphorus vacancy as a deep level in AlInP layers

Wei Jer Sung*, Yu Rue Wu, Shih Chang Lee, Tzu Chi Wen, Tsang Jou Li, Jung Ting Chang, Wei-I Lee

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.

原文English
頁(從 - 到)L567-L568
期刊Japanese Journal of Applied Physics, Part 2: Letters
39
發行號6 B
DOIs
出版狀態Published - 15 6月 2000

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