TY - JOUR
T1 - Phosphor-free white light from InGan blue and green light-emitting diode chips covered with semiconductor-conversion AlGaInP epilayer
AU - Horng, Ray-Hua
AU - Han, Pin
AU - Wuu, Dong Sing
PY - 2008/7/1
Y1 - 2008/7/1
N2 - A phosphor-free white lamp was fabricated using the InGaN-based blue and green light-emitting diode (LED) chips covered with semiconductor-conversion layer AlGalnP. The lamp can provide three bands: a 460-nm blue emission coming from the blue LED, a 555-nm green emission coming from the green LED, and 630-nm red emission coming from the excited AlGalnP epilayer. As 50 mA was injected into the white lamp at room temperature, the chromaticity coordinates and correlated color temperature (TC) are (0.338,0.335) and 5348 K, respectively. By separating injection current into blue and green LED chips, TC of lamp can be tuned from about 4000 K to 5400 K.
AB - A phosphor-free white lamp was fabricated using the InGaN-based blue and green light-emitting diode (LED) chips covered with semiconductor-conversion layer AlGalnP. The lamp can provide three bands: a 460-nm blue emission coming from the blue LED, a 555-nm green emission coming from the green LED, and 630-nm red emission coming from the excited AlGalnP epilayer. As 50 mA was injected into the white lamp at room temperature, the chromaticity coordinates and correlated color temperature (TC) are (0.338,0.335) and 5348 K, respectively. By separating injection current into blue and green LED chips, TC of lamp can be tuned from about 4000 K to 5400 K.
KW - AlGaInP
KW - Chromaticity coordinates
KW - Correlated color temperature
KW - InGaN
KW - Light-emitting diode (LED)
KW - Phosphor-free white lamp
UR - http://www.scopus.com/inward/record.url?scp=65449128074&partnerID=8YFLogxK
U2 - 10.1109/LPT.2008.924882
DO - 10.1109/LPT.2008.924882
M3 - Article
AN - SCOPUS:65449128074
SN - 1041-1135
VL - 20
SP - 1139
EP - 1141
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 13
ER -