GaN films of different buffer thicknesses (from 0 to 600 Å) were grown on (0001) sapphire using MOCVD. The epitaxial films show autodoping with carrier concentration ranging from 8x 1016 to 5x 1017 cm-3 as determined by Hall measurements. The Raman scattering reveals that the A1(LO) mode shifts from 733 to 740 cm-1 as a result of the phonon-plasmon interaction.
|頁（從 - 到）||27-31|
|期刊||Chinese Journal of Physics|
|出版狀態||Published - 1 12月 1998|