Phonon-plasmon interaction in GaN films studied by Raman scattering

C. C. Shen; C. K. Shu; H. C. Lin; Wei-Kuo Chen; W. H. Chen; M. C. Lee

Phonon-plasmon interaction in GaN films studied by Raman scattering

C. C. Shen^*, C. K. Shu, H. C. Lin, Wei-Kuo Chen, W. H. Chen, M. C. Lee

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

GaN films of different buffer thicknesses (from 0 to 600 Å) were grown on (0001) sapphire using MOCVD. The epitaxial films show autodoping with carrier concentration ranging from 8x 10¹⁶ to 5x 10¹⁷ cm^-3 as determined by Hall measurements. The Raman scattering reveals that the A₁(LO) mode shifts from 733 to 740 cm^-1 as a result of the phonon-plasmon interaction.

原文	English
頁（從 - 到）	27-31
頁數	5
期刊	Chinese Journal of Physics
卷	36
發行號	1
出版狀態	Published - 1 12月 1998

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title = "Phonon-plasmon interaction in GaN films studied by Raman scattering",

abstract = "GaN films of different buffer thicknesses (from 0 to 600 {\AA}) were grown on (0001) sapphire using MOCVD. The epitaxial films show autodoping with carrier concentration ranging from 8x 1016 to 5x 1017 cm-3 as determined by Hall measurements. The Raman scattering reveals that the A1(LO) mode shifts from 733 to 740 cm-1 as a result of the phonon-plasmon interaction.",

author = "Shen, {C. C.} and Shu, {C. K.} and Lin, {H. C.} and Wei-Kuo Chen and Chen, {W. H.} and Lee, {M. C.}",

year = "1998",

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AU - Shen, C. C.

AU - Shu, C. K.

AU - Lin, H. C.

AU - Chen, Wei-Kuo

AU - Chen, W. H.

AU - Lee, M. C.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - GaN films of different buffer thicknesses (from 0 to 600 Å) were grown on (0001) sapphire using MOCVD. The epitaxial films show autodoping with carrier concentration ranging from 8x 1016 to 5x 1017 cm-3 as determined by Hall measurements. The Raman scattering reveals that the A1(LO) mode shifts from 733 to 740 cm-1 as a result of the phonon-plasmon interaction.

AB - GaN films of different buffer thicknesses (from 0 to 600 Å) were grown on (0001) sapphire using MOCVD. The epitaxial films show autodoping with carrier concentration ranging from 8x 1016 to 5x 1017 cm-3 as determined by Hall measurements. The Raman scattering reveals that the A1(LO) mode shifts from 733 to 740 cm-1 as a result of the phonon-plasmon interaction.

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M3 - Article

AN - SCOPUS:18844452365

SN - 0577-9073

VL - 36

SP - 27

EP - 31

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

IS - 1

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Phonon-plasmon interaction in GaN films studied by Raman scattering

摘要

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