PHINES: A novel low power program/erase, small pitch, 2-bit per cell flash memory

C. C. Yeh*, W. J. Tsai, M. I. Liu, T. C. Lu, S. K. Cho, C. J. Lin, Ta-Hui Wang, Sam Pan, Chih Yuan Lu

*此作品的通信作者

    研究成果: Conference article同行評審

    25 引文 斯高帕斯(Scopus)

    摘要

    A flash memory cell named PHINES, programming by hot hole injection nitride electron storage, is presented. PHINES uses a nitride trapping storage cell structure, and channel FN erase was performed to raise Vt while programming was done by lowering local Vt through band-to-band hot hole injection. Two physical bits storage, low power P/E, high endurance, good retention and high scaling capability were achieved.

    原文English
    頁(從 - 到)931-934
    頁數4
    期刊Technical Digest - International Electron Devices Meeting
    DOIs
    出版狀態Published - 2002
    事件2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
    持續時間: 8 12月 200211 12月 2002

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