摘要
Ta-Zr Thin films with wide range of compositions were deposited on Si (100) substrate by co-sputtering. RF bias power from 0 to 80 W was applied during deposition. Films were then characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and four-point probe. Result showed the incorporation of Zr caused the formation of low-resistivity BCC Ta, which made the resistivity of Ta-Zr films decrease. With substrate bias increasing, the compositional range for forming amorphous structure shrank. The effects of both thermodynamics and kinetics on Ta-Zr amorphization tendency were discussed.
原文 | English |
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頁(從 - 到) | 110-113 |
頁數 | 4 |
期刊 | Surface and Coatings Technology |
卷 | 198 |
發行號 | 1-3 SPEC. ISS. |
DOIs | |
出版狀態 | Published - 1 8月 2005 |