Phase transition and microstructure change in Ta-Zr alloy films by co-sputtering

Z. Z. Tang, J. H. Hsieh*, S. Y. Zhang, C. Li, Y. Q. Fu

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

Ta-Zr Thin films with wide range of compositions were deposited on Si (100) substrate by co-sputtering. RF bias power from 0 to 80 W was applied during deposition. Films were then characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and four-point probe. Result showed the incorporation of Zr caused the formation of low-resistivity BCC Ta, which made the resistivity of Ta-Zr films decrease. With substrate bias increasing, the compositional range for forming amorphous structure shrank. The effects of both thermodynamics and kinetics on Ta-Zr amorphization tendency were discussed.

原文English
頁(從 - 到)110-113
頁數4
期刊Surface and Coatings Technology
198
發行號1-3 SPEC. ISS.
DOIs
出版狀態Published - 1 8月 2005

指紋

深入研究「Phase transition and microstructure change in Ta-Zr alloy films by co-sputtering」主題。共同形成了獨特的指紋。

引用此