Perspectives on UVC LED: Its progress and application

Tsung Chi Hsu, Yu Tsai Teng, Yen Wei Yeh, Xiaotong Fan, Kuo Hsiung Chu, Su Hui Lin, Kuo Kuang Yeh, Po Tsung Lee, Yue Lin, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo*


研究成果: Article同行評審

61 引文 斯高帕斯(Scopus)


High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron-hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

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出版狀態Published - 6月 2021


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