Performances of Ni-induced lateral crystallization thin film transistors with 〈111〉 and 〈112〉 needle grains

Chih Yuan Hou; Yew-Chuhg Wu

doi:10.1143/JJAP.45.5667

Performances of Ni-induced lateral crystallization thin film transistors with 〈111〉 and 〈112〉 needle grains

Chih Yuan Hou^*, Yew-Chuhg Wu

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

摘要

Thin-film transistors (TFTs) fabricated using 〈111〉 and 〈112〉 needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (μ_FE), 4-fold-higher on/off current ratio (I_on/I_off), and 2.4-fold-lower leakage current (I_Off) compared with those of the 111-TFT.

原文	English
頁（從 - 到）	5667-5670
頁數	4
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	45
發行號	7
DOIs	https://doi.org/10.1143/JJAP.45.5667
出版狀態	Published - 7 7月 2006

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title = "Performances of Ni-induced lateral crystallization thin film transistors with 〈111〉 and 〈112〉 needle grains",

abstract = "Thin-film transistors (TFTs) fabricated using 〈111〉 and 〈112〉 needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (μFE), 4-fold-higher on/off current ratio (Ion/Ioff), and 2.4-fold-lower leakage current (IOff) compared with those of the 111-TFT.",

keywords = "Imprint, LTPS, Ni-metal-induced lateral crystallization, Poly-Si, Thin-film transistors",

author = "Hou, {Chih Yuan} and Yew-Chuhg Wu",

year = "2006",

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doi = "10.1143/JJAP.45.5667",

language = "English",

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T1 - Performances of Ni-induced lateral crystallization thin film transistors with 〈111〉 and 〈112〉 needle grains

AU - Hou, Chih Yuan

AU - Wu, Yew-Chuhg

PY - 2006/7/7

Y1 - 2006/7/7

N2 - Thin-film transistors (TFTs) fabricated using 〈111〉 and 〈112〉 needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (μFE), 4-fold-higher on/off current ratio (Ion/Ioff), and 2.4-fold-lower leakage current (IOff) compared with those of the 111-TFT.

AB - Thin-film transistors (TFTs) fabricated using 〈111〉 and 〈112〉 needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (μFE), 4-fold-higher on/off current ratio (Ion/Ioff), and 2.4-fold-lower leakage current (IOff) compared with those of the 111-TFT.

KW - Imprint

KW - LTPS

KW - Ni-metal-induced lateral crystallization

KW - Poly-Si

KW - Thin-film transistors

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

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Performances of Ni-induced lateral crystallization thin film transistors with 〈111〉 and 〈112〉 needle grains

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