Performance of silicon ballistic nanowire MOSFET with diverse orientations and diameters

A. Abudukelimu*, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

To investigate the performance of the silicon ballistic nanowire MOSFET with diverse orientations and diameters, the subband structure of silicon nanowire has been calculated by using the tight binding simulator, and observed changes of minimum energy in the conduction and the valence subband and effective mass of electron and hole. This paper also presents a compact model, which is used in numerical evaluation of the current vs. voltage characteristics of ballistic devices. Finally, the drain saturation current of n- and p-channel device with different orientations and diameters are shown.

原文English
主出版物標題China Semiconductor Technology International Conference 2010, CSTIC 2010
頁面1111-1116
頁數6
版本1
DOIs
出版狀態Published - 2010
事件China Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
持續時間: 18 三月 201019 三月 2010

出版系列

名字ECS Transactions
號碼1
27
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2010, CSTIC 2010
國家/地區China
城市Shanghai
期間18/03/1019/03/10

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