Nitrogen implantation was used to improve the performance of Ni-salicide process for n-type metal oxide semiconductor field effect transistors (MOSFETs). It is found that the driving current and transconductance of nMOSFETs increase with the nitrogen implantation. The hot carrier degradation of the nMOSFETs is significantly reduced as the nitrogen dosage increases.
|頁（從 - 到）||L381-L383|
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||Published - 1 4月 2002|