Performance improvement of nickel salicided n-type metal oxide semiconductor field effect transistors by nitrogen implantation

Tien-Sheng Chao*, Liang Yao Lee

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Nitrogen implantation was used to improve the performance of Ni-salicide process for n-type metal oxide semiconductor field effect transistors (MOSFETs). It is found that the driving current and transconductance of nMOSFETs increase with the nitrogen implantation. The hot carrier degradation of the nMOSFETs is significantly reduced as the nitrogen dosage increases.

原文English
頁(從 - 到)L381-L383
期刊Japanese Journal of Applied Physics, Part 2: Letters
41
發行號4 A
DOIs
出版狀態Published - 1 4月 2002

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