Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation

Jian Hao Chen*, Tzung Bin Huang, Xiaohua Wu, Dolf Landheer, Tan Fu Lei, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N2+, ion implantation of N+, and N2 O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2 O -plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples.

原文English
期刊Journal of the Electrochemical Society
154
發行號1
DOIs
出版狀態Published - 1 1月 2007

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