摘要
In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400°C-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm 2 /Vs, V th of -2.8 V and sub-threshold swing of 0.25 V/decade. Both shallow trap states of a-IZTO film and interface trap states at the a-IZTO/SiO 2 interface decreased to 2.16 × 10 17 cm -3 eV -1 and 4.38 × 10 12 cm -2 eV -1 , respectively with 400°C annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a-IZTO TFTs.
原文 | English |
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頁(從 - 到) | 1017-1020 |
頁數 | 4 |
期刊 | Digest of Technical Papers - SID International Symposium |
卷 | 45 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 1 1月 2014 |