Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

Dun Bao Ruan; Kuei Shu Chang-Liao; Chih Wei Liu; Yao Jen Lee; Yu Hsuan Chien; Bo Lien Kuo; Yu Chuan Chiu; Kai Jhih Gan; Chih Chieh Hsu; Po Tsun Liu

doi:10.1109/LED.2022.3167952

Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

Dun Bao Ruan, Kuei Shu Chang-Liao^*, Chih Wei Liu, Yao Jen Lee, Yu Hsuan Chien, Bo Lien Kuo, Yu Chuan Chiu, Kai Jhih Gan, Chih Chieh Hsu, Po Tsun Liu

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by using a novel low temperature damage-free supercritical phase fluid (SCF) treatment. Thanks to effective reduction of unstable oxidation states, oxygen vacancies and interface traps, higher on-off current ratios (8 × 105 for pFinFET and 3.3 × 105 for nFinFET), lower S.S. (72 mV/dec), higher on current (>45% improvement) and better reliability in Ge FinFETs are achieved with a SCF treatment as compared with a remote plasma post-oxidation (PPO) one. Besides, a higher voltage gain (88 V/V) of Ge FinFET CMOS inverter is obtained with a SCF treatment in comparison with a remote PPO one.

原文	English
頁（從 - 到）	838-841
頁數	4
期刊	Ieee Electron Device Letters
卷	43
發行號	6
DOIs	https://doi.org/10.1109/LED.2022.3167952
出版狀態	Published - 1 6月 2022

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10.1109/LED.2022.3167952

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@article{5a7e96091fb64b78b1adbae49724660d,

title = "Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment",

abstract = "Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by using a novel low temperature damage-free supercritical phase fluid (SCF) treatment. Thanks to effective reduction of unstable oxidation states, oxygen vacancies and interface traps, higher on-off current ratios (8 × 105 for pFinFET and 3.3 × 105 for nFinFET), lower S.S. (72 mV/dec), higher on current (>45% improvement) and better reliability in Ge FinFETs are achieved with a SCF treatment as compared with a remote plasma post-oxidation (PPO) one. Besides, a higher voltage gain (88 V/V) of Ge FinFET CMOS inverter is obtained with a SCF treatment in comparison with a remote PPO one.",

keywords = "CMOS inverter, Ge FinFET, oxidation state, plasma post-oxidation, supercritical fluid treatment",

author = "Ruan, {Dun Bao} and Chang-Liao, {Kuei Shu} and Liu, {Chih Wei} and Lee, {Yao Jen} and Chien, {Yu Hsuan} and Kuo, {Bo Lien} and Chiu, {Yu Chuan} and Gan, {Kai Jhih} and Hsu, {Chih Chieh} and Liu, {Po Tsun}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2022",

month = jun,

day = "1",

doi = "10.1109/LED.2022.3167952",

language = "English",

volume = "43",

pages = "838--841",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

AU - Ruan, Dun Bao

AU - Chang-Liao, Kuei Shu

AU - Liu, Chih Wei

AU - Lee, Yao Jen

AU - Chien, Yu Hsuan

AU - Kuo, Bo Lien

AU - Chiu, Yu Chuan

AU - Gan, Kai Jhih

AU - Hsu, Chih Chieh

AU - Liu, Po Tsun

PY - 2022/6/1

Y1 - 2022/6/1

N2 - Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by using a novel low temperature damage-free supercritical phase fluid (SCF) treatment. Thanks to effective reduction of unstable oxidation states, oxygen vacancies and interface traps, higher on-off current ratios (8 × 105 for pFinFET and 3.3 × 105 for nFinFET), lower S.S. (72 mV/dec), higher on current (>45% improvement) and better reliability in Ge FinFETs are achieved with a SCF treatment as compared with a remote plasma post-oxidation (PPO) one. Besides, a higher voltage gain (88 V/V) of Ge FinFET CMOS inverter is obtained with a SCF treatment in comparison with a remote PPO one.

AB - Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by using a novel low temperature damage-free supercritical phase fluid (SCF) treatment. Thanks to effective reduction of unstable oxidation states, oxygen vacancies and interface traps, higher on-off current ratios (8 × 105 for pFinFET and 3.3 × 105 for nFinFET), lower S.S. (72 mV/dec), higher on current (>45% improvement) and better reliability in Ge FinFETs are achieved with a SCF treatment as compared with a remote plasma post-oxidation (PPO) one. Besides, a higher voltage gain (88 V/V) of Ge FinFET CMOS inverter is obtained with a SCF treatment in comparison with a remote PPO one.

KW - CMOS inverter

KW - Ge FinFET

KW - oxidation state

KW - plasma post-oxidation

KW - supercritical fluid treatment

UR - http://www.scopus.com/inward/record.url?scp=85129366382&partnerID=8YFLogxK

U2 - 10.1109/LED.2022.3167952

DO - 10.1109/LED.2022.3167952

M3 - Article

AN - SCOPUS:85129366382

SN - 0741-3106

VL - 43

SP - 838

EP - 841

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 6

ER -

Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

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