Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

Dun Bao Ruan, Kuei Shu Chang-Liao*, Chih Wei Liu, Yao Jen Lee, Yu Hsuan Chien, Bo Lien Kuo, Yu Chuan Chiu, Kai Jhih Gan, Chih Chieh Hsu, Po Tsun Liu

*此作品的通信作者

研究成果: Article同行評審

摘要

Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by using a novel low temperature damage-free supercritical phase fluid (SCF) treatment. Thanks to effective reduction of unstable oxidation states, oxygen vacancies and interface traps, higher on-off current ratios (8 × 105 for pFinFET and 3.3 × 105 for nFinFET), lower S.S. (72 mV/dec), higher on current (>45% improvement) and better reliability in Ge FinFETs are achieved with a SCF treatment as compared with a remote plasma post-oxidation (PPO) one. Besides, a higher voltage gain (88 V/V) of Ge FinFET CMOS inverter is obtained with a SCF treatment in comparison with a remote PPO one.

原文English
頁(從 - 到)838-841
頁數4
期刊Ieee Electron Device Letters
43
發行號6
DOIs
出版狀態Published - 1 6月 2022

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