@inproceedings{cf18d2cf54364f50aa0a9bd21ee005c4,
title = "Performance evaluation of pass-transistor-based circuits using monolayer and bilayer 2-D transition metal dichalcogenide (TMD) MOSFETs for 5.9nm node",
abstract = "We comprehensively evaluate and benchmark the performance of pass-transistor logic (PTL) circuits using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on ITRS 2028 node. Our study indicates that the higher VT of bilayer TMD devices significantly degrades the performance of single pass-transistor based circuits compared with the monolayer counterparts despite the higher mobility of bilayer TMD devices. The effect can be mitigated by using full transmission gate or providing a complementary path.",
author = "Yu, {Chang Hung} and Zheng, {Jun Teng} and Pin Su and Chuang, {Ching Te}",
year = "2017",
month = jun,
day = "7",
doi = "10.1109/VLSI-TSA.2017.7942457",
language = "English",
series = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",
address = "美國",
note = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 ; Conference date: 24-04-2017 Through 27-04-2017",
}