Performance evaluation of InGaSb/AlSb P-channel high-hole-mobility transistor faricated using BCl3 dry etching

Chia Hui Yu; Heng-Tung Hsu; Che Yang Chiang; Chien I. Kuo; Yasuyuki Miyamoto; Edward Yi Chang

doi:10.7567/JJAP.52.020203

Performance evaluation of InGaSb/AlSb P-channel high-hole-mobility transistor faricated using BCl₃ dry etching

Chia Hui Yu^*, Heng-Tung Hsu, Che Yang Chiang, Chien I. Kuo, Yasuyuki Miyamoto, Edward Yi Chang

^*此作品的通信作者

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this study, we present the fabrication and characterization of InGaSb/AlSb p-channel high-hole-mobility-transistor devices using inductively coupled plasma (ICP) etching with BCl₃ gas. Devices fabricated by the dry etching technique show good DC and RF performances. Radiofrequency (RF) performance for devices with different source-to-drain spacing (LSD) and gate length (Lg) were investigated. The fabricated 80-nmgate- length p-channel device with 2-μm LSD exhibited a maximum drain current of 86.2mA/mm with peak transconductance (gm) of 64.5mS/mm. The current gain cutoff frequency ( fT) was measured to be 15.8 GHz when the device was biased at V_DS = -1.2 V and V_GS = 0.4 V.

原文	English
文章編號	020203
期刊	Japanese journal of applied physics
卷	52
發行號	2
DOIs	https://doi.org/10.7567/JJAP.52.020203
出版狀態	Published - 2月 2013

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title = "Performance evaluation of InGaSb/AlSb P-channel high-hole-mobility transistor faricated using BCl3 dry etching",

abstract = "In this study, we present the fabrication and characterization of InGaSb/AlSb p-channel high-hole-mobility-transistor devices using inductively coupled plasma (ICP) etching with BCl3 gas. Devices fabricated by the dry etching technique show good DC and RF performances. Radiofrequency (RF) performance for devices with different source-to-drain spacing (LSD) and gate length (Lg) were investigated. The fabricated 80-nmgate- length p-channel device with 2-μm LSD exhibited a maximum drain current of 86.2mA/mm with peak transconductance (gm) of 64.5mS/mm. The current gain cutoff frequency ( fT) was measured to be 15.8 GHz when the device was biased at VDS = -1.2 V and VGS = 0.4 V.",

author = "Yu, {Chia Hui} and Heng-Tung Hsu and Chiang, {Che Yang} and Kuo, {Chien I.} and Yasuyuki Miyamoto and Chang, {Edward Yi}",

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AU - Yu, Chia Hui

AU - Hsu, Heng-Tung

AU - Chiang, Che Yang

AU - Kuo, Chien I.

AU - Miyamoto, Yasuyuki

AU - Chang, Edward Yi

PY - 2013/2

Y1 - 2013/2

N2 - In this study, we present the fabrication and characterization of InGaSb/AlSb p-channel high-hole-mobility-transistor devices using inductively coupled plasma (ICP) etching with BCl3 gas. Devices fabricated by the dry etching technique show good DC and RF performances. Radiofrequency (RF) performance for devices with different source-to-drain spacing (LSD) and gate length (Lg) were investigated. The fabricated 80-nmgate- length p-channel device with 2-μm LSD exhibited a maximum drain current of 86.2mA/mm with peak transconductance (gm) of 64.5mS/mm. The current gain cutoff frequency ( fT) was measured to be 15.8 GHz when the device was biased at VDS = -1.2 V and VGS = 0.4 V.

AB - In this study, we present the fabrication and characterization of InGaSb/AlSb p-channel high-hole-mobility-transistor devices using inductively coupled plasma (ICP) etching with BCl3 gas. Devices fabricated by the dry etching technique show good DC and RF performances. Radiofrequency (RF) performance for devices with different source-to-drain spacing (LSD) and gate length (Lg) were investigated. The fabricated 80-nmgate- length p-channel device with 2-μm LSD exhibited a maximum drain current of 86.2mA/mm with peak transconductance (gm) of 64.5mS/mm. The current gain cutoff frequency ( fT) was measured to be 15.8 GHz when the device was biased at VDS = -1.2 V and VGS = 0.4 V.

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DO - 10.7567/JJAP.52.020203

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JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

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Performance evaluation of InGaSb/AlSb P-channel high-hole-mobility transistor faricated using BCl3 dry etching

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Performance evaluation of InGaSb/AlSb P-channel high-hole-mobility transistor faricated using BCl₃ dry etching