TY - GEN
T1 - Performance Evaluation of AFeRAM under Low Temperature Operation
AU - Chen, Yi Chuan
AU - Chen, Yu Chen
AU - Hsiang, Kuo Yu
AU - Lee, Min Hung
AU - Su, Pin
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.
AB - In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.
UR - http://www.scopus.com/inward/record.url?scp=85158088819&partnerID=8YFLogxK
U2 - 10.1109/EDTM55494.2023.10103076
DO - 10.1109/EDTM55494.2023.10103076
M3 - Conference contribution
AN - SCOPUS:85158088819
T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
BT - 7th IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Y2 - 7 March 2023 through 10 March 2023
ER -
