Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design

Szu Ping Tsai, Heng-Tung Hsu*, Joachim Wuerfl, Edward Yi Chang

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The piezoelectric polarization of the AlGaN/GaN high-electron-mobility transistors (HEMTs) is strongly related to the strain state in the active area. Therefore, understanding the strain behavior inside the channel is crucial to the device electrical performance improvement of devices. This paper, for the first time, reveals the potential of optimizing flip-chip structures with active-region bumps to modulate the strain state of the AlGaN/GaN HEMT for enhancing the piezoelectric effect. The thermo-mechanical strain is observed to be affected by the physical dimensions and the material properties of the package. Thus, incorporating device strain engineering into packaging design will be very important for GaN devices due to their strong piezoelectric effects.

原文English
文章編號7534734
頁(從 - 到)3876-3881
頁數6
期刊IEEE Transactions on Electron Devices
63
發行號10
DOIs
出版狀態Published - 10月 2016

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