Performance enhancement in deep-submicron poly-SiGe-gated CMOS devices

Keyphrases

• CMOS Devices 100%
• Deep Submicron 100%
• Performance Enhancement 100%
• Poly-SiGe 100%
• Poly-Si 50%
• PMOSFET 33%
• PMOS Device 33%
• MOSFET 16%
• Device Reliability 16%
• Channel Length 16%
• Hole Mobility 16%
• NMOS Device 16%
• Gate Oxide Integrity 16%
• Device Performance 16%
• Angstrom 16%
• Boron 16%
• Current Drive 16%
• Gate Oxide Thickness 16%
• Depletion Effect 16%
• Physical Channel 16%

Material Science

• Oxide Compound 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Boron 50%
• Hole Mobility 50%

Chemical Engineering

• Polysilicon 100%