Performance enhancement in deep-submicron poly-SiGe-gated CMOS devices

Wen Chin Lee; Tsu Jae King; Chen-Ming Hu

doi:10.1109/VTSA.1999.785988

Performance enhancement in deep-submicron poly-SiGe-gated CMOS devices

Wen Chin Lee^*
, Tsu Jae King
, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

摘要

Poly-SiGe- and poly-Si-gated N/PMOS devices with physical channel lengths down to 0.1μm and gate oxide thicknesses down to 25 angstrom were fabricated. Device performance and reliability were characterized. The poly-SiGe-gated NMOS and PMOS devices provide superior current drive due to less gate-depletion effect and higher inversion hole mobility in poly-SiGe-gated devices. In addition, gate oxide integrity in poly-SiGe-gated MOSFET is as good as poly-Si-gated device. Poly-SiGe-gated PMOSFET has better reliability than poly-Si-gated PMOSFET due to reduction of boron penetration.

原文	English
頁（從 - 到）	14-18
頁數	5
期刊	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs	https://doi.org/10.1109/VTSA.1999.785988
出版狀態	Published - 1999
事件	Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan 持續時間: 7 6月 1999 → 10 6月 1999

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10.1109/VTSA.1999.785988

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@article{08485e4c7231463e9984a52df4de39fd,

title = "Performance enhancement in deep-submicron poly-SiGe-gated CMOS devices",

abstract = "Poly-SiGe- and poly-Si-gated N/PMOS devices with physical channel lengths down to 0.1μm and gate oxide thicknesses down to 25 angstrom were fabricated. Device performance and reliability were characterized. The poly-SiGe-gated NMOS and PMOS devices provide superior current drive due to less gate-depletion effect and higher inversion hole mobility in poly-SiGe-gated devices. In addition, gate oxide integrity in poly-SiGe-gated MOSFET is as good as poly-Si-gated device. Poly-SiGe-gated PMOSFET has better reliability than poly-Si-gated PMOSFET due to reduction of boron penetration.",

author = "Lee, \{Wen Chin\} and King, \{Tsu Jae\} and Chen-Ming Hu",

year = "1999",

doi = "10.1109/VTSA.1999.785988",

language = "English",

pages = "14--18",

journal = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

issn = "1524-766X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications ; Conference date: 07-06-1999 Through 10-06-1999",

}

TY - JOUR

T1 - Performance enhancement in deep-submicron poly-SiGe-gated CMOS devices

AU - Lee, Wen Chin

AU - King, Tsu Jae

AU - Hu, Chen-Ming

PY - 1999

Y1 - 1999

N2 - Poly-SiGe- and poly-Si-gated N/PMOS devices with physical channel lengths down to 0.1μm and gate oxide thicknesses down to 25 angstrom were fabricated. Device performance and reliability were characterized. The poly-SiGe-gated NMOS and PMOS devices provide superior current drive due to less gate-depletion effect and higher inversion hole mobility in poly-SiGe-gated devices. In addition, gate oxide integrity in poly-SiGe-gated MOSFET is as good as poly-Si-gated device. Poly-SiGe-gated PMOSFET has better reliability than poly-Si-gated PMOSFET due to reduction of boron penetration.

AB - Poly-SiGe- and poly-Si-gated N/PMOS devices with physical channel lengths down to 0.1μm and gate oxide thicknesses down to 25 angstrom were fabricated. Device performance and reliability were characterized. The poly-SiGe-gated NMOS and PMOS devices provide superior current drive due to less gate-depletion effect and higher inversion hole mobility in poly-SiGe-gated devices. In addition, gate oxide integrity in poly-SiGe-gated MOSFET is as good as poly-Si-gated device. Poly-SiGe-gated PMOSFET has better reliability than poly-Si-gated PMOSFET due to reduction of boron penetration.

UR - https://www.scopus.com/pages/publications/0032599261

U2 - 10.1109/VTSA.1999.785988

DO - 10.1109/VTSA.1999.785988

M3 - Conference article

AN - SCOPUS:0032599261

SN - 1524-766X

SP - 14

EP - 18

JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

T2 - Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications

Y2 - 7 June 1999 through 10 June 1999

ER -

Performance enhancement in deep-submicron poly-SiGe-gated CMOS devices

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