TY - JOUR
T1 - Performance enhancement in deep-submicron poly-SiGe-gated CMOS devices
AU - Lee, Wen Chin
AU - King, Tsu Jae
AU - Hu, Chen-Ming
PY - 1999
Y1 - 1999
N2 - Poly-SiGe- and poly-Si-gated N/PMOS devices with physical channel lengths down to 0.1μm and gate oxide thicknesses down to 25 angstrom were fabricated. Device performance and reliability were characterized. The poly-SiGe-gated NMOS and PMOS devices provide superior current drive due to less gate-depletion effect and higher inversion hole mobility in poly-SiGe-gated devices. In addition, gate oxide integrity in poly-SiGe-gated MOSFET is as good as poly-Si-gated device. Poly-SiGe-gated PMOSFET has better reliability than poly-Si-gated PMOSFET due to reduction of boron penetration.
AB - Poly-SiGe- and poly-Si-gated N/PMOS devices with physical channel lengths down to 0.1μm and gate oxide thicknesses down to 25 angstrom were fabricated. Device performance and reliability were characterized. The poly-SiGe-gated NMOS and PMOS devices provide superior current drive due to less gate-depletion effect and higher inversion hole mobility in poly-SiGe-gated devices. In addition, gate oxide integrity in poly-SiGe-gated MOSFET is as good as poly-Si-gated device. Poly-SiGe-gated PMOSFET has better reliability than poly-Si-gated PMOSFET due to reduction of boron penetration.
UR - http://www.scopus.com/inward/record.url?scp=0032599261&partnerID=8YFLogxK
U2 - 10.1109/VTSA.1999.785988
DO - 10.1109/VTSA.1999.785988
M3 - Conference article
AN - SCOPUS:0032599261
SN - 1524-766X
SP - 14
EP - 18
JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
T2 - Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications
Y2 - 7 June 1999 through 10 June 1999
ER -