Performance enhancement for strained HfCO2 nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement

Woei Cherng Wu*, Tien-Sheng Chao, Te Hsin Chiu, Jer Chyi Wang, Chao Sung Lai, Ma Ming-Wen, Wen Cheng Lo, Yi Hsun Ho

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

High-performance CESL strained nMOSFET with HfO2 gate dielectrics has been successfully demonstrated in this work. It is found that, the transconductance (gm) and driving current (Ion) of the nMOSFETs increase 70% and 90%, respectively, of the increase of devices with a 300 nm capping nitride layer. A superior HfO2/Si interface for CESL-devices is observed, demonstrated by an obvious interface state density reduction (6.56×1011 to 9.85×l010 cm-2). Further, a roughly 50% and 60% increase of gm and Ion; respectively, can be achieved for the 300 nm SiN-capped HfO2 nMOSFET without considering charge trapping under pulsed-IV measurement.

原文English
主出版物標題IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面161-164
頁數4
DOIs
出版狀態Published - 2007
事件IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
持續時間: 20 12月 200722 12月 2007

出版系列

名字IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區Taiwan
城市Tainan
期間20/12/0722/12/07

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