In this study, an n-channel metal-oxide-semiconductor field-effect transistor (nMPSFET) fabricated with local strained channel techniques on a (111) Si substrate using a SiN capping layer with high mechanical stress and the stack gate of amorphous silicon (α-Si) and polycrystalline silicon (poly-Si) was investigated. By using these techniques, the performance improvement of the nMPSFETs in the (110) channel direction on the (111) substrate was achieved. The on-current and transconductance (Gm) increased with increasing SiN capping layer or α-Si layer thickness. Pur experimental results show that devices with a 700 Å α-Si layer show a 6.7% on-current improvement percentage relative to those with a 200 Å α-Si layer, and a corresponding Gm improvement percentage of 10.2%. In addition, charge pumping current/interface state density decreased for the samples with a thicker SiN layer.
|頁（從 - 到）||5715-5718|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 7 9月 2007|