Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

Ray-Hua Horng; D. S. Wuu; W. C. Peng; M. F. Huang; P. H. Liu; C. H. Seieh; K. C. Lin

doi:10.1117/12.392180

Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

Ray-Hua Horng^*, D. S. Wuu, W. C. Peng, M. F. Huang, P. H. Liu, C. H. Seieh, K. C. Lin

^*此作品的通信作者

電子研究所

研究成果 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

AlGaInP light emitting diode (LED) with a minor substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, flee-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO₂/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO₂ layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.

原文	English
頁（從 - 到）	507-513
頁數	7
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	4078
DOIs	https://doi.org/10.1117/12.392180
出版狀態	Published - 1 1月 2000
事件	Optoelectronic Materials and Devices II - Taipei, Taiwan 持續時間: 26 7月 2000 → 28 7月 2000

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title = "Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes",

abstract = "AlGaInP light emitting diode (LED) with a minor substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, flee-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO2/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO2 layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.",

author = "Ray-Hua Horng and Wuu, {D. S.} and Peng, {W. C.} and Huang, {M. F.} and Liu, {P. H.} and Seieh, {C. H.} and Lin, {K. C.}",

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TY - JOUR

T1 - Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

AU - Horng, Ray-Hua

AU - Wuu, D. S.

AU - Peng, W. C.

AU - Huang, M. F.

AU - Liu, P. H.

AU - Seieh, C. H.

AU - Lin, K. C.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - AlGaInP light emitting diode (LED) with a minor substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, flee-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO2/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO2 layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.

AB - AlGaInP light emitting diode (LED) with a minor substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, flee-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO2/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO2 layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.

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U2 - 10.1117/12.392180

DO - 10.1117/12.392180

M3 - Conference article

AN - SCOPUS:0033698370

SN - 0277-786X

VL - 4078

SP - 507

EP - 513

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Optoelectronic Materials and Devices II

Y2 - 26 July 2000 through 28 July 2000

ER -

Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

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