Performance and reliability of poly-Si TFTs on FSG buffer layer

Shen De Wang*, Tzu Yun Chang, Chao-Hsin Chien, Wei Hsiang Lo, Jen Yi Sang, Jam Wen Lee, Tan Fu Lei

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.

原文English
頁(從 - 到)467-469
頁數3
期刊IEEE Electron Device Letters
26
發行號7
DOIs
出版狀態Published - 1 7月 2005

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