Performance and reliability of poly-Si TFTs on FSG buffer layer

Shen De Wang; Tzu Yun Chang; Chao-Hsin Chien; Wei Hsiang Lo; Jen Yi Sang; Jam Wen Lee; Tan Fu Lei

doi:10.1109/LED.2005.851242

Performance and reliability of poly-Si TFTs on FSG buffer layer

Shen De Wang^*, Tzu Yun Chang, Chao-Hsin Chien, Wei Hsiang Lo, Jen Yi Sang, Jam Wen Lee, Tan Fu Lei

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電子研究所

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.

原文	English
頁（從 - 到）	467-469
頁數	3
期刊	IEEE Electron Device Letters
卷	26
發行號	7
DOIs	https://doi.org/10.1109/LED.2005.851242
出版狀態	Published - 1 7月 2005

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10.1109/LED.2005.851242

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abstract = "A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.",

keywords = "Buffer layer, Fluorinated silicate oxide (FSG), Fluorine, Polycrystalline silicon thin-film transistors (poly-Si TFTs), Reliability",

author = "Wang, {Shen De} and Chang, {Tzu Yun} and Chao-Hsin Chien and Lo, {Wei Hsiang} and Sang, {Jen Yi} and Lee, {Jam Wen} and Lei, {Tan Fu}",

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T1 - Performance and reliability of poly-Si TFTs on FSG buffer layer

AU - Wang, Shen De

AU - Chang, Tzu Yun

AU - Chien, Chao-Hsin

AU - Lo, Wei Hsiang

AU - Sang, Jen Yi

AU - Lee, Jam Wen

AU - Lei, Tan Fu

PY - 2005/7/1

Y1 - 2005/7/1

N2 - A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.

AB - A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.

KW - Buffer layer

KW - Fluorinated silicate oxide (FSG)

KW - Fluorine

KW - Polycrystalline silicon thin-film transistors (poly-Si TFTs)

KW - Reliability

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U2 - 10.1109/LED.2005.851242

DO - 10.1109/LED.2005.851242

M3 - Article

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VL - 26

SP - 467

EP - 469

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

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Performance and reliability of poly-Si TFTs on FSG buffer layer

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