@inproceedings{9cca479530d4440da51004ff70d4a808,
title = "Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory",
abstract = "The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ∼2nm Al2O3 tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.",
author = "Fan, {Yang Shun} and Chan, {Wei Liang} and Chang, {Chih Hsiang} and Zheng, {Guang Ting} and Chang, {Che Chia} and Po-Tsun Liu",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",
year = "2015",
month = jun,
doi = "10.1109/IPFA.2015.7224421",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "381--384",
booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",
address = "美國",
}