In this paper, a complete study of the cell reliability based on a unique oxide damage characterization for two different programming schemes of p-channel flash cell will he presented. These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both Nit and Qox will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.
|頁（從 - 到）||295-298|
|期刊||Technical Digest - International Electron Devices Meeting, IEDM|
|出版狀態||Published - 1 12月 1997|
|事件||1997 International Electron Devices Meeting - Washington, DC, USA|
持續時間: 7 12月 1997 → 10 12月 1997