摘要
In this paper, a complete study of the cell reliability based on a unique oxide damage characterization for two different programming schemes of p-channel flash cell will he presented. These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both Nit and Qox will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.
原文 | English |
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頁(從 - 到) | 295-298 |
頁數 | 4 |
期刊 | Technical Digest - International Electron Devices Meeting, IEDM |
DOIs | |
出版狀態 | Published - 1 12月 1997 |
事件 | 1997 International Electron Devices Meeting - Washington, DC, USA 持續時間: 7 12月 1997 → 10 12月 1997 |