Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement

Woei Cherng Wu*, Tien-Sheng Chao, Te Hsin Chiu, Jer Chyi Wang, Chao Sung Lai, Ming Wen Ma, Wen Cheng Lo

*此作品的通信作者

研究成果: Article › 同行評審

3 引文 斯高帕斯（Scopus）

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Material Science