Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement
- Woei Cherng Wu*
- , Tien-Sheng Chao
- , Te Hsin Chiu
- , Jer Chyi Wang
- , Chao Sung Lai
- , Ming Wen Ma
- , Wen Cheng Lo
*此作品的通信作者
研究成果: Article › 同行評審
3
引文
斯高帕斯（Scopus）