Pentacene phototransistor with gate voltage independent responsivity and sensitivity by small silver nanoparticles decoration

S. H. Yuan, Z. Pei*, H. C. Lai, Pei-Wen Li, Y. J. Chan

*此作品的通信作者

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this study, a Pentacene phototransistor (PT) decorated with silver nanoparticles (Ag-NPs) in bottom gate structure was demonstrated. With the ultra-small Ag-NPs, this device exploits surface plasmon resonance at 445 nm and established a stable surface conduction channel under light illumination. Therefore, the PT exhibit gate voltage independent responsivity and photosensitivity in broad range of gate voltage. The light-induced magnetized in ultra-small Ag-NPs that generate polarized surface electrons were used to explain the gate-voltage independent photocurrent. The maximum photosensitivity and responsivity are 2.1 × 103 and 17.7 mA/W, respectively, under white-light illumination. They are enhanced around 25 times at gate voltage of 20 V than conventional phototransistor. This device may be used in flexible optical interactive display, white-light indoor communication, or optical sensors.

原文English
文章編號3244
頁(從 - 到)7-11
頁數5
期刊Organic Electronics
27
DOIs
出版狀態Published - 1 12月 2015

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