Pentacene-based organic phototransistor with high sensitivity to weak light and wide dynamic range

Hsiao-Wen Zan*, Shih Chin Kao, Shiang Ruei Ouyang

*此作品的通信作者

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

In this letter, the channel length effect, combined with the photoelectric field effect of organic phototransistors, has been investigated for the first time. Reducing the channel length and applying a positive gate bias during illumination enhance electron trapping effectively and hence improve the photoresponsivity of a pentacene-based phototransistor. The sensing dynamic range and the photosensitivity to very weak light (in the range of microwatts per square centimeter) are also discussed through the interaction between deep trapped states, interface energy-band bending, and photoexcited electrons.

原文English
文章編號5393054
頁(從 - 到)135-137
頁數3
期刊Ieee Electron Device Letters
31
發行號2
DOIs
出版狀態Published - 2月 2010

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