Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching

Fu Ju Hou; Horng-Chih Lin; Hsuen Li Chen; Jan Tsai Liu; Ching Te Pan; Fu-Hsiang Ko; Men Fang Wang; Tiao Yuan Huang

doi:10.1109/IMNC.2002.1178573

Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching

Fu Ju Hou, Horng-Chih Lin, Hsuen Li Chen, Jan Tsai Liu, Ching Te Pan, Fu-Hsiang Ko, Men Fang Wang, Tiao Yuan Huang

研究成果: Conference contribution › 同行評審

摘要

Patterning of nanoscale Si (<100 nm) lines is essential for nano Si device applications. In this work, electron-beam (e-beam) lithography with NEB-22 or hydrogen silsesquioxane (HSQ) resists was employed to generate nanoscale patterns. E-beam exposure was performed in a Leica Weprint 200 system. The measured linewidth was analysed as a function of dosage for different designed linewidths on NEB-22 and HSQ resist films. A linear relationship with roughly constant slope is observed for all cases. HSQ has the advantages of high contrast and small width fluctuation for thinner line width definition by e-beam lithography. Nevertheless, dosage up to several hundreds μC/cm ² is too high, and may prevent HSQ from being used in practical applications.

原文	English
主出版物標題	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	120-121
頁數	2
ISBN（電子）	4891140313, 9784891140311
DOIs	https://doi.org/10.1109/IMNC.2002.1178573
出版狀態	Published - 2002
事件	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan 持續時間: 6 11月 2002 → 8 11月 2002

出版系列

名字	2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Conference

Conference	International Microprocesses and Nanotechnology Conference, MNC 2002
國家/地區	Japan
城市	Tokyo
期間	6/11/02 → 8/11/02

存取文件

10.1109/IMNC.2002.1178573

其它文件與鏈接

Link to publication in Scopus

引用此

Hou, F. J., Lin, H.-C., Chen, H. L., Liu, J. T., Pan, C. T., Ko, F.-H., Wang, M. F., & Huang, T. Y. (2002). Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching. 於 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (頁 120-121). 文章 1178573 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178573

Hou, Fu Ju ; Lin, Horng-Chih ; Chen, Hsuen Li 等. / Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching. 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. 頁 120-121 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

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title = "Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching",

abstract = "Patterning of nanoscale Si (<100 nm) lines is essential for nano Si device applications. In this work, electron-beam (e-beam) lithography with NEB-22 or hydrogen silsesquioxane (HSQ) resists was employed to generate nanoscale patterns. E-beam exposure was performed in a Leica Weprint 200 system. The measured linewidth was analysed as a function of dosage for different designed linewidths on NEB-22 and HSQ resist films. A linear relationship with roughly constant slope is observed for all cases. HSQ has the advantages of high contrast and small width fluctuation for thinner line width definition by e-beam lithography. Nevertheless, dosage up to several hundreds μC/cm 2 is too high, and may prevent HSQ from being used in practical applications.",

author = "Hou, {Fu Ju} and Horng-Chih Lin and Chen, {Hsuen Li} and Liu, {Jan Tsai} and Pan, {Ching Te} and Fu-Hsiang Ko and Wang, {Men Fang} and Huang, {Tiao Yuan}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; International Microprocesses and Nanotechnology Conference, MNC 2002 ; Conference date: 06-11-2002 Through 08-11-2002",

year = "2002",

doi = "10.1109/IMNC.2002.1178573",

language = "English",

series = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "120--121",

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Hou, FJ, Lin, H-C, Chen, HL, Liu, JT, Pan, CT, Ko, F-H, Wang, MF & Huang, TY 2002, Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching. 於 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178573, 2002 International Microprocesses and Nanotechnology Conference, MNC 2002, Institute of Electrical and Electronics Engineers Inc., 頁 120-121, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 6/11/02. https://doi.org/10.1109/IMNC.2002.1178573

Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching. / Hou, Fu Ju; Lin, Horng-Chih; Chen, Hsuen Li 等.
2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 120-121 1178573 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching

AU - Hou, Fu Ju

AU - Lin, Horng-Chih

AU - Chen, Hsuen Li

AU - Liu, Jan Tsai

AU - Pan, Ching Te

AU - Ko, Fu-Hsiang

AU - Wang, Men Fang

AU - Huang, Tiao Yuan

PY - 2002

Y1 - 2002

N2 - Patterning of nanoscale Si (<100 nm) lines is essential for nano Si device applications. In this work, electron-beam (e-beam) lithography with NEB-22 or hydrogen silsesquioxane (HSQ) resists was employed to generate nanoscale patterns. E-beam exposure was performed in a Leica Weprint 200 system. The measured linewidth was analysed as a function of dosage for different designed linewidths on NEB-22 and HSQ resist films. A linear relationship with roughly constant slope is observed for all cases. HSQ has the advantages of high contrast and small width fluctuation for thinner line width definition by e-beam lithography. Nevertheless, dosage up to several hundreds μC/cm 2 is too high, and may prevent HSQ from being used in practical applications.

AB - Patterning of nanoscale Si (<100 nm) lines is essential for nano Si device applications. In this work, electron-beam (e-beam) lithography with NEB-22 or hydrogen silsesquioxane (HSQ) resists was employed to generate nanoscale patterns. E-beam exposure was performed in a Leica Weprint 200 system. The measured linewidth was analysed as a function of dosage for different designed linewidths on NEB-22 and HSQ resist films. A linear relationship with roughly constant slope is observed for all cases. HSQ has the advantages of high contrast and small width fluctuation for thinner line width definition by e-beam lithography. Nevertheless, dosage up to several hundreds μC/cm 2 is too high, and may prevent HSQ from being used in practical applications.

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U2 - 10.1109/IMNC.2002.1178573

DO - 10.1109/IMNC.2002.1178573

M3 - Conference contribution

AN - SCOPUS:84960406275

T3 - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

SP - 120

EP - 121

BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2002

Y2 - 6 November 2002 through 8 November 2002

ER -

Hou FJ, Lin HC, Chen HL, Liu JT, Pan CT, Ko FH 等. Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching. 於 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 120-121. 1178573. (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). doi: 10.1109/IMNC.2002.1178573

Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching

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